EE 207 : Electronic Devices
Course Code EE 207
Course Name Electronic Devices
Offered to UG/PG
Pre-requisites NIL
Lecture 2
Tutorial 1
Practical 0
Credit 6
Reference D. A. Neamen, Semiconductor Physics and Devices (IRWIN), Times Mirror High Education Group, Chicago) 1997. E.S. Yang, Microelectronic Devices, McGraw Hill, Singapore, 1988. B.G. Streetman, Solid State Electronic Devices, Prentice Hall of India, New Delhi, 1995. J. Millman and A. Grabel, Microelectronics, McGraw Hill, International, 1987. A.S. Sedra and K.C. Smith, Microelectronic Circuits, Saunder`s College Publishing, 1991. R.T. Howe and C.G. Sodini, Microelectronics: An integrated Approach, Prentice Hall International, 1997.
Description Modeling devices: Static characteristics of ideal two terminal and three terminal devices; Small signal models of non-linear devices. Introduction to semiconductor equations and carrier statistics: poisson`s and continuity equations, Fermi-Dirac statistics and Boltzmann approximation to the Fermi-Dirac statistics. Semiconductor Diodes: Barrier formation in metal-semiconductor junctions, PN homo- and hetero- junctions; CV characteristics and dopant profiling; IV characteristics; Small signal models of diodes; Some Applications of diodes. Field Effect Devices: JFET/HFET, MIS structures and MOSFET operation; JFET characteristics and small signal models; MOS capacitor CV and concept of accumulation, depletion and inversion; MOSFET characteristics and small signal models. Bipolar transistors: IV characteristics and elers-Moll model; small signal models; Charge storage and transient response. Discrete transistor amplifiers: Common emitter and common source amplifiers; Emitter and source followers.